Project P10 

Monolithic Detectors 

Participants: AGH, IFJ, JSI, UHH, DESY; ESR: 3 yrs (contact person: M. Idzik, AGH)

Monolithic active pixel sensors and detectors based on silicon-on-insulator technologies.

Detectors for a future high luminosity B-factory and for the proposed International Linear Collider require precision vertex reconstruction in a high track density and radiation dose environment. Compared with current silicon strip and hybrid pixel detectors, a significant reduction in overall material thickness is needed to achieve the desired vertex resolution. Considerable progress in the development of thin CMOS-based Monolithic Active Pixel Sensors (MAPS) in recent years makes them a viable technology option. The most serious concerns are their radiation hardness and their readout speed. These will be addressed in several prototypes, some already existing and others still to be designed.

The work is embedded in detector development teams (including super-BELLE and ILC) and will cover MAPS design, readout electronics, detector irradiations, detector testing and vertex detector layout studies.