Project P3

 

Radiation Hard Crystals / 3D Detectors

Participants: CERN, JSI, UHH; ESR: 2 × 3 yrs (contact person: R. Klanner, UHH)

New materials and read-out geometries for ultra radiation hard sensors.

Epitaxially-grown silicon sensors (in particular using p-type crystals) with thicknesses up to 150m will be fabricated and investigated. Based on past measurements they are expected to be radiation hard in terms of increase of effective doping concentration. Using solid-state measure­ment techniques, the microscopic and macroscopic damage will be studied as function of type of radiation, radiation dose and annealing scenario. Measurements with small pixel/strip proto­type sensors connected to LHC/SLHC speed electronics will start in the second year with the aim to determine charge collection efficiency, detection efficiency, and position resolution as well as to optimize reconstruction algorithms.

Within the framework of the CERN-RD50 collaboration the performance of 3D detectors will be investigated. A prototype of the double column type detectors (3D-dct) will be processed by mid 2008 (IRST, CNM, Glasgow University) followed by further iterations. The initial focus will be the measurements of the signal formation in different columns. Simulation tools will be developed to interpret the measurements and to improve the design. Studies of charge collection efficiency and position resolution will follow for various sets of operation parameters (e.g. radiation dose, annealing and temperature). Special emphasis will be devoted to the development of algorithms for position reconstruction. Finally a running scenario for the SLHC will be proposed.