Project P9 

 

Front-end Electronics for Hybrid Pixel Detectors

Participants: NIKHEF, PSI; ESR: 3 yrs, ER: 2 yrs (contact person : Els Koffemann, NIKHEF)

New readout architectures for the front-end electronics for the upgrades of the ATLAS and CMS pixel detectors.

The present LHC pixel detectors are based on n-on-n silicon pixel sensors with a readout using 0.25 micron CMOS technology. The radiation hardness of both sensor and electronics has been the subject of many tests and is well understood. The inner layer of the pixel system is estimated to last approximately 3 years at high LHC luminosity requiring a replacement of the inner layer of the pixel detector. A simple copy of the system is not sensible as the present chips suffer from the limitations of the 0.25 micron technology which was the state of the art at the time of construction. During the project we aim at the development of a full scale pixel chip based on 0.13 micron CMOS technology. This technology offers the opportunity to implement new features like an increased high rate capability, which is especially important for the innermost pixel layer. In addition a reduction of the readout pitch can be envisaged.